STB25NM50N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STB25NM50N Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
550V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
22A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STB25N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Turn On Delay Time
23 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
140m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2565pF @ 25V
Current - Continuous Drain (Id) @ 25°C
22A Tc
Gate Charge (Qg) (Max) @ Vgs
84nC @ 10V
Rise Time
23ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
88A
Dual Supply Voltage
500V
Nominal Vgs
3 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$4.20998
$4.20998
STB25NM50N Product Details
STB25NM50N Description
STB25NM50N is a 500v N-channel MDmesh? II Power MOSFET. This STB25NM50N is realized with the second generation of MDmesh? Technology. This
revolutionary MOSFET STB25NM50N associates a new vertical structure to the Company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.