IRF7807VPBF

new-10%

Manufacturer part number:IRF7807VPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 8.3A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7807VPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	8.3A
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Row Spacing	6.3 mm
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	6.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	8.3A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 5V
Rise Time	1.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V
Vgs (Max)	±20V
Fall Time (Typ)	2.2 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	8.3A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Nominal Vgs	3 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free