IRF9389TRPBF

new-10%

IRF9389TRPBF

Manufacturer part number:IRF9389TRPBF

Manufacturer:Infineon Technologies

Description:IRF9389TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF9389TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	Other Transistors
Max Power Dissipation	2W
Terminal Form	GULL WING
Base Part Number	IRF9389
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id	2.3V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds	398pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6.8A 4.6A
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	14ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	15 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	4.6A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	34A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free