BUK9K52-60E,115

new-10%

Manufacturer part number:BUK9K52-60E,115

Manufacturer:Nexperia USA Inc.

Description:Dual N-Channel 60 V 49 mOhm 10 nC SMT Logic Level Mosfet - LFPAK56

Case Package:SOT-23

Datasheet:BUK9K52-60E,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SOT-1205, 8-LFPAK56
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Max Power Dissipation	32W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	20
Pin Count	8
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PSSO-G4
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	32W
Case Connection	DRAIN
Turn On Delay Time	6.2 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	49m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	725pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Rise Time	10.1ns
Fall Time (Typ)	9 ns
Turn-Off Delay Time	10.7 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	10V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.055Ohm
Pulsed Drain Current-Max (IDM)	64A
Avalanche Energy Rating (Eas)	11.9 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant