FDS4501H Description

Utilizing a cutting-edge PowerTrench technique that has been specifically designed to reduce on-state resistance while maintaining low gate charge for enhanced switching performance, this complementary MOSFET half-bridge device is created.

FDS4501H Features

• N-Channel Q1

• 9.3A, 30V

• RDS(on) maximum = 18 m at VGS = 10 V,

• Maximum RDS(on) = 23 m at 4.5 volts

• P-Channel Q2

• -5.6A, -20V

• RDS(on) maximum = 46 m at VGS = -4.5 V

• RDS(on) maximum = 63 m at VGS = -2.5 V

FDS4501H Applications

• This product is all-purpose and appropriate for a wide range of uses.

• Converters, DC/DC

• Power Control

• Charge Switch

• Battery Security