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FDS4501H

  • FDS4501H
  • FDS4501H

FDS4501H

FDS4501H

ON Semiconductor

FDS4501H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDS4501H Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 18MOhm
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 9.3A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 15 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1958pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.3A 5.6A
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 25 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 9.3A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.575mm
Length 4.9mm
Width 3.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.59609 $1.19218
5,000 $0.56793 $2.83965
12,500 $0.54782 $6.57384
FDS4501H Product Details

FDS4501H Description


Utilizing a cutting-edge PowerTrench technique that has been specifically designed to reduce on-state resistance while maintaining low gate charge for enhanced switching performance, this complementary MOSFET half-bridge device is created.



FDS4501H Features


  • N-Channel Q1

  • 9.3A, 30V

  • RDS(on) maximum = 18 m at VGS = 10 V,

  • Maximum RDS(on) = 23 m at 4.5 volts

  • P-Channel Q2

  • -5.6A, -20V

  • RDS(on) maximum = 46 m at VGS = -4.5 V

  • RDS(on) maximum = 63 m at VGS = -2.5 V



FDS4501H Applications


  • This product is all-purpose and appropriate for a wide range of uses.

  • Converters, DC/DC

  • Power Control

  • Charge Switch

  • Battery Security


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