NDC7003P              Description

These dual P?Channel Enhancement Mode Power Field Effect Transistors are produced using onsemi?ˉs proprietary Trench Technology. This very high density process has been designed to minimize on?state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.

NDC7003P          Features

? ?0.34 A, ?60 V RDS(ON) = 5  @ VGS = ?10 V

RDS(ON) = 7  @ VGS = ?4.5 V

? Low Gate Charge

? Fast Switching Speed

? High Performance Trench Technology for Low RDS(ON)

? SUPERSOT?6 Package: Small Footprint (72% smaller than

standard SO?8); Low Profile (1 mm Thick)

? This is a Pb?Free Device

NDC7003P              Applications

This product is particularly suited to low voltage applications requiring a low current high side switch.