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IRF9540NSTRLPBF

IRF9540NSTRLPBF

IRF9540NSTRLPBF

Infineon Technologies

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 117m Ω @ 14A, 10V ±20V 1450pF @ 25V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

IRF9540NSTRLPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series HEXFET®
Published 2003
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 117mOhm
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-23A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Voltage 100V
Power Dissipation-Max 3.1W Ta 110W Tc
Element ConfigurationSingle
Current 23A
Operating ModeENHANCEMENT MODE
Power Dissipation3.8W
Case Connection DRAIN
Turn On Delay Time13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 117m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time67ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 51 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) -23A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 84 mJ
Recovery Time 210 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs -4 V
Height 5.084mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:2841 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.27000$2.27
500$2.2473$1123.65
1000$2.2246$2224.6
1500$2.2019$3302.85
2000$2.1792$4358.4
2500$2.1565$5391.25

IRF9540NSTRLPBF Product Details

IRF9540NSTRLPBF Description


IRF9540NSTRLPBF is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 100V. The operating temperature of IRF9540NSTRLPBF is -55°C~150°C TJ and its maximum power dissipation is 3.8W. This design has increased the repeating avalanche rating, a 150°C junction operating temperature, and quick switching speed. These characteristics work together to make this design a very effective and dependable tool for use in a range of other applications.



IRF9540NSTRLPBF Features


  • Advanced Process Technology

  • Ultra Low On-Resistance

  • 150°C Operating Temperature

  • Fast Switching

  • Repetitive Avalanche Allowed up to Tjmax

  • Some Parameters are Different from IRF9540NS/L

  • P-Channel

  • Lead-Free



IRF9540NSTRLPBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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