IRFP450PBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 760 mJ (Eas).Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2600pF @ 25V maximal input capacitance.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.Its turn-off delay time is 92 ns, which is the time to charge the device's input capacitance before drain current conduction begins.As far as peak drain current is concerned, its maximum pulsed current is 56A.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFP450PBF Features
the avalanche energy rating (Eas) is 760 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 92 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V
IRFP450PBF Applications
There are a lot of Vishay Siliconix IRFP450PBF applications of single MOSFETs transistors.
- Server power supplies
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- Power Management Functions
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- Battery Protection Circuit
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- Motor control
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- Motor Drives and Uninterruptible Power Supples
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- DC/DC converters
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- Synchronous Rectification for ATX 1 Server I Telecom PSU
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- Telecom 1 Sever Power Supplies
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- Consumer Appliances
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- AC-DC Power Supply
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