IRFB3207PBF

new-10%

Manufacturer part number:IRFB3207PBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 4.5m Ω @ 75A, 10V ±20V 7600pF @ 50V 260nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:IRFB3207PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	2004
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	75V
Technology	MOSFET (Metal Oxide)
Current Rating	180A
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	330W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	29 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7600pF @ 50V
Current - Continuous Drain (Id) @ 25°C	170A Tc
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	120ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	74 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	180A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	75A
Drain-source On Resistance-Max	0.0045Ohm
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	720A
Dual Supply Voltage	75V
Nominal Vgs	4 V
Height	4.82mm
Length	10.6426mm
Width	4.826mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free