IRFB4115GPBF

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IRFB4115GPBF

Manufacturer part number:IRFB4115GPBF

Manufacturer:Infineon Technologies

Description:IRFB4115GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFB4115GPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	11MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	380W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	380W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 62A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5270pF @ 50V
Current - Continuous Drain (Id) @ 25°C	104A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	73ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	39 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	104A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	420A
Avalanche Energy Rating (Eas)	220 mJ
Nominal Vgs	3 V
Height	16.51mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free