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NTD32N06-001

NTD32N06-001

NTD32N06-001

ON Semiconductor

MOSFET N-CH 60V 32A IPAK

SOT-23

NTD32N06-001 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 32A
Power Dissipation-Max 1.5W Ta 93.75W Tj
Element Configuration Single
Power Dissipation 93.75W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1725pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 84ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 93 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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