IRFB4710PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFB4710PBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2001
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
14mOhm
Terminal Finish
MATTE TIN OVER NICKEL
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
75A
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Power Dissipation-Max
3.8W Ta 200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200W
Case Connection
DRAIN
Turn On Delay Time
35 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14m Ω @ 45A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6160pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
170nC @ 10V
Rise Time
130ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
38 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
75A
Threshold Voltage
5.5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Recovery Time
110 ns
Nominal Vgs
5.5 V
Height
8.77mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.24000
$3.24
50
$2.64600
$132.3
100
$2.39850
$239.85
500
$1.90350
$951.75
1,000
$1.60650
$1.6065
IRFB4710PBF Product Details
IRFB4710PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6160pF @ 25V.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=100V.?And this device has 100V drain to source breakdown voltage.As a result of its turn-off delay time, which is 41 ns, the device has taken time to charge its input capacitance before drain current conduction begins.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Threshold voltage is?the point at which an electrical device is set to activate any one of its operations, and this transistor has 5.5V threshold voltage. In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFB4710PBF Features
a continuous drain current (ID) of 75A a drain-to-source breakdown voltage of 100V voltage the turn-off delay time is 41 ns a threshold voltage of 5.5V
IRFB4710PBF Applications
There are a lot of Infineon Technologies IRFB4710PBF applications of single MOSFETs transistors.
Solar Inverter
General Purpose Interfacing Switch
Motor drives and Uninterruptible Power Supplies
Consumer Appliances
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,