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IRFB4710PBF

IRFB4710PBF

IRFB4710PBF

Infineon Technologies

IRFB4710PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IRFB4710PBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 14mOhm
Terminal Finish MATTE TIN OVER NICKEL
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating 75A
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 3.8W Ta 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 130ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 5.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 110 ns
Nominal Vgs 5.5 V
Height 8.77mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.24000 $3.24
50 $2.64600 $132.3
100 $2.39850 $239.85
500 $1.90350 $951.75
1,000 $1.60650 $1.6065
IRFB4710PBF Product Details

IRFB4710PBF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6160pF @ 25V.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=100V.?And this device has 100V drain to source breakdown voltage.As a result of its turn-off delay time, which is 41 ns, the device has taken time to charge its input capacitance before drain current conduction begins.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Threshold voltage is?the point at which an electrical device is set to activate any one of its operations, and this transistor has 5.5V threshold voltage. In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFB4710PBF Features


a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 41 ns
a threshold voltage of 5.5V

IRFB4710PBF Applications


There are a lot of Infineon Technologies IRFB4710PBF applications of single MOSFETs transistors.

  • Solar Inverter
  • General Purpose Interfacing Switch
  • Motor drives and Uninterruptible Power Supplies
  • Consumer Appliances
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Telecom 1 Sever Power Supplies
  • Server power supplies
  • DC-to-DC converters
  • Industrial Power Supplies
  • Power Tools

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