IRLR014TR

new-10%

Manufacturer part number:IRLR014TR

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 7.7A DPAK

Case Package:SOT-23

Datasheet:IRLR014TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	2.5W Ta 25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	200m Ω @ 4.6A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.7A Tc
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 5V
Rise Time	110ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4V 5V
Vgs (Max)	±10V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	7.7A
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	0.2Ohm
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	27.4 mJ
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant