IRFH4201TRPBF

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IRFH4201TRPBF

Manufacturer part number:IRFH4201TRPBF

Manufacturer:Infineon Technologies

Description:IRFH4201TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFH4201TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Copper, Silver, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Number of Elements	1
Power Dissipation-Max	3.5W Ta 156W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	0.95m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.1V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6100pF @ 13V
Current - Continuous Drain (Id) @ 25°C	49A Ta
Gate Charge (Qg) (Max) @ Vgs	94nC @ 10V
Rise Time	43ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	49A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	478 mJ
Height	900μm
Length	6mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free