IRFH5025TR2PBF

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IRFH5025TR2PBF

Manufacturer part number:IRFH5025TR2PBF

Manufacturer:Infineon Technologies

Description:IRFH5025TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFH5025TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	8-PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.6W
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	2150pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3.8A Ta
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Rise Time	6.3ns
Drain to Source Voltage (Vdss)	250V
Fall Time (Typ)	6.1 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	32A
Threshold Voltage	20V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	250V
Input Capacitance	2.15nF
Recovery Time	83 ns
Drain to Source Resistance	100mOhm
Rds On Max	100 mΩ
Nominal Vgs	20 V
Height	838.2μm
Length	5.9944mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant