IRFH5110TR2PBF

new-10%

Manufacturer part number:IRFH5110TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 5X6 PQFN

Case Package:SOT-23

Datasheet:IRFH5110TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	8-PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	114W
Turn On Delay Time	7.8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3152pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Ta 63A Tc
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Rise Time	9.6ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	6.4 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	63A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	3.152nF
Recovery Time	51 ns
Drain to Source Resistance	12.4mOhm
Rds On Max	12.4 mΩ
Nominal Vgs	4 V
Height	838.2μm
Length	5.9944mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant