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IRFH5204TRPBF

IRFH5204TRPBF

IRFH5204TRPBF

Infineon Technologies

MOSFET N-CH 40V 22A PQFN

SOT-23

IRFH5204TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 105W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 105W
Case Connection DRAIN
Turn On Delay Time 8.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.3 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0043Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 400A
Nominal Vgs 4 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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