IRFH8337TR2PBF

new-10%

Manufacturer part number:IRFH8337TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 9.7A 5X6 PQFN

Case Package:SOT-23

Datasheet:IRFH8337TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Supplier Device Package	PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2012
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Resistance	12.8MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.2W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.2W
Turn On Delay Time	6.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12.8mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 10V
Current - Continuous Drain (Id) @ 25°C	12A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	4.1 ns
Turn-Off Delay Time	5.7 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	790pF
Recovery Time	18 ns
Drain to Source Resistance	12.8mOhm
Rds On Max	12.8 mΩ
Nominal Vgs	1.8 V
Height	1.17mm
Length	5.85mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free