IRFHM830DTRPBF

new-10%

Manufacturer part number:IRFHM830DTRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 20A PQFN

Case Package:SOT-23

Datasheet:IRFHM830DTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-VQFN Exposed Pad
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	7.1MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.8W Ta 37W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	DRAIN
Turn On Delay Time	9.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	1797pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.7 ns
Turn-Off Delay Time	9.1 ns
Continuous Drain Current (ID)	20A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	40A
Drain to Source Breakdown Voltage	30V
Nominal Vgs	1.8 V
Height	990.6μm
Length	3.2766mm
Width	3.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free