IRFHM831TR2PBF

new-10%

Manufacturer part number:IRFHM831TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 14A PQFN

Case Package:SOT-23

Datasheet:IRFHM831TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Packaging	Cut Tape (CT)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	6.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.8m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	12ns
Fall Time (Typ)	4.7 ns
Turn-Off Delay Time	6.2 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	96A
Avalanche Energy Rating (Eas)	50 mJ
Recovery Time	22 ns
Nominal Vgs	1.8 V
Height	990.6μm
Length	3.2766mm
Width	3.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant