BFL4007

new-10%

Manufacturer part number:BFL4007

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 8.7A TO-220FI

Case Package:SOT-23

Datasheet:BFL4007 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta 40W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	680m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 30V
Current - Continuous Drain (Id) @ 25°C	8.7A Ta
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	72ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	48 ns
Turn-Off Delay Time	122 ns
Continuous Drain Current (ID)	8.7A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.68Ohm
Pulsed Drain Current-Max (IDM)	49A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	215 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant