NTMSD2P102LR2G

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Manufacturer part number:NTMSD2P102LR2G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 2.3A 8-SOIC

Case Package:SOT-23

Datasheet:NTMSD2P102LR2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	FETKY™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-2.3A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	710mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 16V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Rise Time	35ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±10V
Fall Time (Typ)	29 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	2.3A
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	-20V
FET Feature	Schottky Diode (Isolated)
Feedback Cap-Max (Crss)	175 pF
RoHS Status	RoHS Compliant
Lead Free	Lead Free