NTMFS4108NT3G

new-10%

Manufacturer part number:NTMFS4108NT3G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 13.5A SO8FL

Case Package:SOT-23

Datasheet:NTMFS4108NT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Current Rating	22A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.1W Ta 96.2W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.2m Ω @ 21A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	13.5A Ta
Gate Charge (Qg) (Max) @ Vgs	54nC @ 4.5V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	140 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.0022Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	203A
RoHS Status	RoHS Compliant
Lead Free	Lead Free