IRFP4468PBF

new-10%

Manufacturer part number:IRFP4468PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 195A TO-247AC

Case Package:SOT-23

Datasheet:IRFP4468PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	2.6MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
[email protected] Reflow Temperature-Max (s)	30
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	520W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	520W
Case Connection	DRAIN
Turn On Delay Time	52 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.6m Ω @ 180A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	19860pF @ 50V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	540nC @ 10V
Rise Time	230ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	260 ns
Turn-Off Delay Time	160 ns
Continuous Drain Current (ID)	290A
Threshold Voltage	4V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	740 mJ
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	24.99mm
Length	15.87mm
Width	5.3086mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free