Name: IRFR120NTRPBF
Brand: Infineon Technologies
SKU: IRFR120NTRPBF
Price: 0.93000 USD
Availability: InStock

new-10%

IRFR120NTRPBF

Manufacturer part number:IRFR120NTRPBF

Manufacturer:Infineon Technologies

Description:IRFR120NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFR120NTRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	D-Pak
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	1998
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	210mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	9.1A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	48W Tc
Element Configuration	Single
Power Dissipation	39W
Turn On Delay Time	4.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	210mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.4A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	23ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	9.4A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Input Capacitance	330pF
Recovery Time	150 ns
Max Junction Temperature (Tj)	175°C
Drain to Source Resistance	210mOhm
Rds On Max	210 mΩ
Nominal Vgs	4 V
Height	2.52mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRFR120NTRPBF Product Details

IRFR120NTRPBF Description

IRFR120NTRPBF is a member of the fifth-generation HEXFETs that are manufactured by Infineon Technologies based on advanced processing techniques. Based on these techniques, it is able to provide extremely low on-resistance per silicon area, fast switching speed, and ruggedized device design. As a result, it is extremely efficient and reliable for electronic designers to use in a broad range of applications.