SQ2361EES-T1-GE3

new-10%

Manufacturer part number:SQ2361EES-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 60V 2.5A 2W P.CH 150mohm @ 10V

Case Package:SOT-23

Datasheet:SQ2361EES-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Digi-Reel®
Published	2013
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	7 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	150m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	545pF @ 30V
Current - Continuous Drain (Id) @ 25°C	2.5A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	2.5A
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Nominal Vgs	-2.5 V
Feedback Cap-Max (Crss)	50 pF
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free