IRF7422D2PBF

new-10%

Manufacturer part number:IRF7422D2PBF

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 20V 4.3A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7422D2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	FETKY™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Current Rating	-4.3A
Number of Elements	1
Power Dissipation-Max	2W Ta
Element Configuration	Single
Power Dissipation	2W
Turn On Delay Time	8.1 ns
Forward Current	4A
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	90m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	610pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.3A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 4.5V
Rise Time	26ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
Forward Voltage	520mV
Fall Time (Typ)	33 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	-4.3A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4.6A
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	-20V
Max Forward Surge Current (Ifsm)	20A
FET Feature	Schottky Diode (Isolated)
Nominal Vgs	4 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free