STB16PF06LT4

new-10%

Manufacturer part number:STB16PF06LT4

Manufacturer:STMicroelectronics

Description:MOSFET P-CH 60V 16A D2PAK

Case Package:SOT-23

Datasheet:STB16PF06LT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
Current Rating	-16A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB16P
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	630pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	15.5nC @ 4.5V
Rise Time	90ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	19.5 ns
Turn-Off Delay Time	25.5 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	64A
Avalanche Energy Rating (Eas)	250 mJ
RoHS Status	ROHS3 Compliant