NTGS1135PT1G

new-10%

Manufacturer part number:NTGS1135PT1G

Manufacturer:ON Semiconductor

Description:MOSFET 8V Power Mosfet P-Channel

Case Package:SOT-23

Datasheet:NTGS1135PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	970mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	31m Ω @ 4.6A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 6V
Current - Continuous Drain (Id) @ 25°C	4.6A Ta
Gate Charge (Qg) (Max) @ Vgs	21nC @ 4.5V
Rise Time	16ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	3.9 ns
Turn-Off Delay Time	128 ns
Continuous Drain Current (ID)	4.6A
Gate to Source Voltage (Vgs)	6V
Drain-source On Resistance-Max	0.031Ohm
Drain to Source Breakdown Voltage	-8V
RoHS Status	RoHS Compliant
Lead Free	Lead Free