PSMN6R3-120ESQ

new-10%

Manufacturer part number:PSMN6R3-120ESQ

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 120V 70A I2PAK

Case Package:SOT-23

Datasheet:PSMN6R3-120ESQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	405W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	42.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11384pF @ 60V
Current - Continuous Drain (Id) @ 25°C	70A Tc
Gate Charge (Qg) (Max) @ Vgs	207.1nC @ 10V
Rise Time	58.2ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	67.7 ns
Turn-Off Delay Time	142.1 ns
Continuous Drain Current (ID)	70A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	120V
Drain-source On Resistance-Max	0.0067Ohm
Pulsed Drain Current-Max (IDM)	280A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant