IRFS3206PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFS3206PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2007
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
210A
Power Dissipation-Max
300W Tc
Element Configuration
Single
Power Dissipation
300mW
Turn On Delay Time
19 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
6540pF @ 50V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
170nC @ 10V
Rise Time
82ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
83 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
210A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Recovery Time
50 ns
Height
4.826mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
IRFS3206PBF Product Details
IRFS3206PBF Description
The IRFS3206PBF is a single N-channel HEXFET ?Power MOSFET with increased gate, avalanche, and dynamic dV/dt toughness. It is appropriate for high-efficiency synchronous rectification in SMPS, hard-switched, and high-frequency circuits.
IRFS3206PBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness