IRFSL38N20DPBF

new-10%

Manufacturer part number:IRFSL38N20DPBF

Manufacturer:Infineon Technologies

Description:INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew

Case Package:SOT-23

Datasheet:IRFSL38N20DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Packaging	Tube
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Power
Max Power Dissipation	300W
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.8W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	54m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	43A Tc
Gate Charge (Qg) (Max) @ Vgs	91nC @ 10V
Rise Time	95ns
Drain to Source Voltage (Vdss)	200V
Fall Time (Typ)	47 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	44A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.054Ohm
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	460 mJ
Height	9.65mm
Length	10.67mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant