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IRFU4104PBF

IRFU4104PBF

IRFU4104PBF

Infineon Technologies

MOSFET N-CH 40V 42A I-PAK

SOT-23

IRFU4104PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Current Rating 119A
Lead Pitch 2.28mm
Lead Length 9.65mm
Power Dissipation-Max 140W Tc
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.5m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Rise Time 69ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 119A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Dual Supply Voltage 40V
Recovery Time 42 ns
Nominal Vgs 4 V
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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