FDR838P

new-10%

Manufacturer part number:FDR838P

Manufacturer:ON Semiconductor

Description:Trans MOSFET P-CH 20V 8A 8-Pin SuperSOT T/R

Case Package:SOT-23

Datasheet:FDR838P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-LSOP (0.130, 3.30mm Width)
Supplier Device Package	SuperSOT™-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.8W Ta
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	17mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3300pF @ 10V
Current - Continuous Drain (Id) @ 25°C	8A Ta
Gate Charge (Qg) (Max) @ Vgs	45nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V