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SSM3K303T(TE85L,F)

SSM3K303T(TE85L,F)

SSM3K303T(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2.9A TSM

SOT-23

SSM3K303T(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series π-MOSVII
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta
Element Configuration Single
Power Dissipation 700mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 83m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Gate Charge (Qg) (Max) @ Vgs 3.3nC @ 4V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 2.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status RoHS Compliant

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