RP1L055SNTR

new-10%

Manufacturer part number:RP1L055SNTR

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 60V 5.5A MPT6

Case Package:SOT-23

Datasheet:RP1L055SNTR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
JESD-30 Code	R-PDSO-F6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	49m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	730pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5.5A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	5.5A
Drain-source On Resistance-Max	0.063Ohm
Pulsed Drain Current-Max (IDM)	22A
DS Breakdown Voltage-Min	60V
RoHS Status	ROHS3 Compliant