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IRFU4105PBF

IRFU4105PBF

IRFU4105PBF

Infineon Technologies

MOSFET N-CH 55V 27A I-PAK

SOT-23

IRFU4105PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 45Ohm
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 27A
Power Dissipation-Max 68W Tc
Power Dissipation 48W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 49ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 27A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Nominal Vgs 4 V
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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