IRFU4620PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFU4620PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2009
Series
HEXFET®
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Power Dissipation-Max
144W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
144W
Case Connection
DRAIN
Turn On Delay Time
13.4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
78m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1710pF @ 50V
Current - Continuous Drain (Id) @ 25°C
24A Tc
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Rise Time
22.4ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
14.8 ns
Turn-Off Delay Time
25.4 ns
Continuous Drain Current (ID)
24A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.078Ohm
Drain to Source Breakdown Voltage
200V
Dual Supply Voltage
200V
Nominal Vgs
5 V
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:3772 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.374412
$0.374412
10
$0.353219
$3.53219
100
$0.333225
$33.3225
500
$0.314364
$157.182
1000
$0.296570
$296.57
IRFU4620PBF Product Details
IRFU4620PBF Description
These N-Channel logic Level MOSFETs are made using Fairchild Semiconductor's PowerTrench? process, which includes Shielded Gate technology. This technique's on-state resistance has been improved while keeping excellent switching performance. A G-S zener was inserted to improve the ESD voltage level.
IRFU4620PBF Features
Ruggedness of the Gate, Avalanche, and Dynamic dV/dt
Avalanche SOA and fully characterized capacitance
Enhanced dV/dt and dI/dt capability of body diodes
Lead-Free
IRFU4620PBF Applications
Synchronous Rectification with High Efficiency in SMPS
Uninterruptible Power Supply (UPS) is a type of power supply that is
Power Switching at High Speed
Circuits with hard switches and high frequencies
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