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PHD3055E,118

PHD3055E,118

PHD3055E,118

Rochester Electronics, LLC

MOSFET N-CH 60V 10.3A DPAK

SOT-23

PHD3055E,118 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series TrenchMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 33W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 150mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.3A Tc
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:2155 items

About PHD3055E,118

The PHD3055E,118 from Rochester Electronics, LLC is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 10.3A DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PHD3055E,118, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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