IRLR3410PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLR3410PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1998
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
79W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
105m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 5V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
17A
Drain-source On Resistance-Max
0.125Ohm
Pulsed Drain Current-Max (IDM)
60A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
150 mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.21000
$1.21
10
$1.08200
$10.82
100
$0.86640
$86.64
500
$0.68424
$342.12
1,000
$0.55171
$0.55171
IRLR3410PBF Product Details
IRLR3410PBF Description
The IRLR3410PBF power MOSFETs are designed with proven silicon processes to provide designers with a wide range of options to support a variety of applications including DC motors, inverters, solar power systems, lighting, load switches, and battery-powered applications. The IRLR3410PBF is available in a variety of surface mount and through-hole packages with industry-standard footprints.
This IRLR3410PBF is a 100V single-channel HEXFET? Power MOSFET, fifth generation HEXFET that utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. In addition to these advantages, the HEXFET power MOSFET is well known for its fast switching speed and rugged construction, which makes it an excellent device for devices used in a wide range of applications. With the D-PAK, surface mounting can be accomplished using the vapor phase, infrared, or wave soldering techniques. It is possible for surface mount devices to dissipate power levels as high as 1.5W.
IRLR3410PBF Features
Planar cell structure for wide SOA
Industry-standard surface-mount power package
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100KHz
IRLR3410PBF Applications
Power Management
Industrial uses
Domestic uses
Low Power Standby or Bias Voltage Supplies
Industrial Process Control, Metering, and Security Systems
High-Efficiency Replacement for High Voltage Linear Regulators