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IRLR3410PBF

IRLR3410PBF

IRLR3410PBF

Infineon Technologies

IRLR3410PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IRLR3410PBF Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 79W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 17A
Drain-source On Resistance-Max 0.125Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 150 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.21000 $1.21
10 $1.08200 $10.82
100 $0.86640 $86.64
500 $0.68424 $342.12
1,000 $0.55171 $0.55171
IRLR3410PBF Product Details

IRLR3410PBF Description

The IRLR3410PBF power MOSFETs are designed with proven silicon processes to provide designers with a wide range of options to support a variety of applications including DC motors, inverters, solar power systems, lighting, load switches, and battery-powered applications. The IRLR3410PBF is available in a variety of surface mount and through-hole packages with industry-standard footprints. 

This IRLR3410PBF is a 100V single-channel HEXFET? Power MOSFET, fifth generation HEXFET that utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. In addition to these advantages, the HEXFET power MOSFET is well known for its fast switching speed and rugged construction, which makes it an excellent device for devices used in a wide range of applications. With the D-PAK, surface mounting can be accomplished using the vapor phase, infrared, or wave soldering techniques. It is possible for surface mount devices to dissipate power levels as high as 1.5W.


IRLR3410PBF Features

  • Planar cell structure for wide SOA

  • Industry-standard surface-mount power package

  • Optimized for broadest availability from distribution partners

  • Product qualification according to JEDEC standard

  • Silicon optimized for applications switching below <100KHz


IRLR3410PBF Applications

  • Power Management

  • Industrial uses

  • Domestic uses

  • Low Power Standby or Bias Voltage Supplies

  • Industrial Process Control, Metering, and Security Systems

  • High-Efficiency Replacement for High Voltage Linear Regulators


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