IXFQ24N50P2

new-10%

Manufacturer part number:IXFQ24N50P2

Manufacturer:IXYS

Description:500V POLAR2 HIPERFETS

Case Package:SOT-23

Datasheet:IXFQ24N50P2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™, PolarP2™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Pure Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	480W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	270m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2890pF @ 25V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	24A
Drain-source On Resistance-Max	0.27Ohm
Pulsed Drain Current-Max (IDM)	50A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	750 mJ
RoHS Status	Non-RoHS Compliant