Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRFU9120NPBF

IRFU9120NPBF

IRFU9120NPBF

Infineon Technologies

IRFU9120NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFU9120NPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 1998
Series HEXFET®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 480MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating-6.6A
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 40W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation39W
Case Connection DRAIN
Turn On Delay Time14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.6A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time47ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) -6.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.5A
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 26A
Dual Supply Voltage -100V
Nominal Vgs -4 V
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1822 items

IRFU9120NPBF Product Details

IRFU9120NPBF Description


IRFU9120NPBF is a -100v HEXFET? Power MOSFET. The HEXFET IRFU9120NPBF from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.



IRFU9120NPBF Features


  • Ultra Low On-Resistance

  • P-Channel

  • Straight Lead (IRFU9120N)

  • Advanced Process Technology

  • Fast Switching

  • Fully Avalanche Rated

  • Lead-Free



IRFU9120NPBF Applications


  • DC motor drive

  • High efficiency synchronous rectification in SMPS

  • Uninterruptible power supply

  • High speed power switching

  • Hard switched and high frequency circuits


Get Subscriber

Enter Your Email Address, Get the Latest News