IRFU9120NPBF

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IRFU9120NPBF

Manufacturer part number:IRFU9120NPBF

Manufacturer:Infineon Technologies

Description:IRFU9120NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFU9120NPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	480MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory	Other Transistors
Voltage - Rated DC	-100V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	-6.6A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	39W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	480m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6.6A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	47ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	-6.6A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6.5A
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	26A
Dual Supply Voltage	-100V
Nominal Vgs	-4 V
Height	6.22mm
Length	6.7056mm
Width	2.3876mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free