FDMS5362L-F085

new-10%

Manufacturer part number:FDMS5362L-F085

Manufacturer:ON Semiconductor

Description:N-Channel 60V 17.6A (Tc) 41.7W (Tc) Surface Mount Power56

Case Package:SOT-23

Datasheet:FDMS5362L-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	LIFETIME (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	172.8mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	41.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	33m Ω @ 17.6A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	878pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17.6A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	31 ns
Continuous Drain Current (ID)	17.6A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.042Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	32 mJ
RoHS Status	ROHS3 Compliant