BUZ32H3045AATMA1

new-10%

Manufacturer part number:BUZ32H3045AATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 200V 9.5A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:BUZ32H3045AATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	SIPMOS®
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	75W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	400m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.5A Tc
Rise Time	40ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	9.5A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.4Ohm
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	120 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant