IRFZ48ZSPBF

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IRFZ48ZSPBF

Manufacturer part number:IRFZ48ZSPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 61A D2PAK

Case Package:SOT-23

Datasheet:IRFZ48ZSPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	11MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	61A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	91W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	91W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 37A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1720pF @ 25V
Current - Continuous Drain (Id) @ 25°C	61A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Rise Time	69ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	39 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	61A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	240A
Avalanche Energy Rating (Eas)	120 mJ
Recovery Time	100 ns
Height	4.576mm
Length	10.67mm
Width	9.652mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free