IRLL3303TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLL3303TRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1999
Series
HEXFET®
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
31mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4.6A
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Power Dissipation-Max
1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.1W
Case Connection
DRAIN
Turn On Delay Time
7.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
31m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
840pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.6A Ta
Gate Charge (Qg) (Max) @ Vgs
50nC @ 10V
Rise Time
22ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
28 ns
Turn-Off Delay Time
33 ns
Continuous Drain Current (ID)
4.6A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
6.5A
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Recovery Time
98 ns
Nominal Vgs
1 V
Height
1.8mm
Length
6.6802mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.160697
$4.160697
10
$3.925186
$39.25186
100
$3.703006
$370.3006
500
$3.493401
$1746.7005
1000
$3.295662
$3295.662
IRLL3303TRPBF Product Details
IRLL3303TRPBF Description
The IRLL3303TRPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. The IRLL3303TRPBF is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.