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IRLL3303TRPBF

IRLL3303TRPBF

IRLL3303TRPBF

Infineon Technologies

IRLL3303TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLL3303TRPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 31mOhm
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.6A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 4.6A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 6.5A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Recovery Time 98 ns
Nominal Vgs 1 V
Height 1.8mm
Length 6.6802mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.160697 $4.160697
10 $3.925186 $39.25186
100 $3.703006 $370.3006
500 $3.493401 $1746.7005
1000 $3.295662 $3295.662
IRLL3303TRPBF Product Details

IRLL3303TRPBF Description


The IRLL3303TRPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. The IRLL3303TRPBF is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.



IRLL3303TRPBF Features


  • Surface Mount

  • Dynamic dv/dt Rating

  • Logic-Level Gate Drive

  • Fast Switching

  • Ease of Paralleling

  • Advanced Process Technology

  • Ultra-Low On-Resistance

  • Lead-Free



IRLL3303TRPBF Applications


  • Mechanical testing

  • Vibration analysis

  • Ultrasonic inspection

  • Data logging

  • Induction furnaces

  • Arc furnaces and arc welders


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