IRG4BC10SD-L Description

IRG4BC10SD-L is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for specific application conditions. As a Generation 4 IGBT,  it is able to offer the highest efficiencies available, and lower losses than MOSFET's conduction and diode losses. This IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Its HEXFRED diodes are optimized for performance with IGBTs. 

IRG4BC10SD-L Features

Industry-standard D2Pak & TO-262 packages

Extremely low voltage drop 1.1Vtyp. @ 2A

Extremely tight Vce(on) distribution

Minimizes power dissipation at up to 3 kHz PWM frequency in inverter drives, up to 4 kHz in brushless DC drives

Highest efficiencies available

IRG4BC10SD-L Applications

Industrial motor drive

Solar inverters

Welding