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IRG4BC20F-SPBF

IRG4BC20F-SPBF

IRG4BC20F-SPBF

Infineon Technologies

IRG4BC20F-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20F-SPBF Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Packaging Tube
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 60W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 16A
Test Condition 480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Gate Charge 27nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 24ns/190ns
Switching Energy 70μJ (on), 600μJ (off)
IRG4BC20F-SPBF Product Details

IRG4BC20F-SPBF Description


Infineon Technologies is a single IGBT from the manufacturer Infineon Technologies with Gate Charge of 27nC. IRG4BC20F-SPBF has 3 pins and it is available in Tube packaging way. The maximum power dissipation of the IRG4BC20F-SPBF is 60W and its Current - Collector (Ic) (Max) is 16A.



IRG4BC20F-SPBF Features


  • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching,20 kHz in resonant mode).

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

  • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

  • Industry standard D2Pak package



IRG4BC20F-SPBF Applications


  • Generation 4 IGBTs offer highest efficiencies available

  • IGBTs optimized for specific application conditions

  • HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing

  • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs


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