IRG4BC20F-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC20F-SPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
60W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
16A
Test Condition
480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 9A
Gate Charge
27nC
Current - Collector Pulsed (Icm)
64A
Td (on/off) @ 25°C
24ns/190ns
Switching Energy
70μJ (on), 600μJ (off)
IRG4BC20F-SPBF Product Details
IRG4BC20F-SPBF Description
Infineon Technologies is a single IGBT from the manufacturer Infineon Technologies with Gate Charge of 27nC. IRG4BC20F-SPBF has 3 pins and it is available in Tube packaging way. The maximum power dissipation of the IRG4BC20F-SPBF is 60W and its Current - Collector (Ic) (Max) is 16A.
IRG4BC20F-SPBF Features
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching,20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry standard D2Pak package
IRG4BC20F-SPBF Applications
Generation 4 IGBTs offer highest efficiencies available
IGBTs optimized for specific application conditions
HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs