IRG4RC10SPBF Description

IRG4RC10SPBF is a 600v insulated gate bipolar transistor. The Infineon IRG4RC10SPBF can be applied in Communications equipment, Wired networking, Enterprise systems, Enterprise projectors, Personal electronics, and Portable electronics applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4RC10SPBF is in the TO-252AA package with 38W power dissipation. 

IRG4RC10SPBF Features

Extremely low voltage drop; 1.0V typical at 2A, 100°C

Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than the previous generation

Industry-standard TO-252AA package

Generation 4 IGBTs offer the highest efficiency available

IGBTs optimized for specified application conditions

IRG4RC10SPBF Applications

Communications equipment 

Wired networking 

Enterprise systems 

Enterprise projectors 

Personal electronics 

Portable electronics