IRG4BC15MDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4BC15MDPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
49W
Current Rating
14A
Element Configuration
Single
Power Dissipation
49W
Input Type
Standard
Power - Max
49W
Rise Time
38ns
Collector Emitter Voltage (VCEO)
2.3V
Max Collector Current
14A
Reverse Recovery Time
28 ns
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
14A
Collector Emitter Saturation Voltage
2.3V
Test Condition
480V, 8.6A, 75Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 8.6A
Gate Charge
46nC
Current - Collector Pulsed (Icm)
28A
Td (on/off) @ 25°C
21ns/540ns
Switching Energy
320μJ (on), 1.93mJ (off)
Height
15.24mm
Length
10.5156mm
Width
4.699mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.666240
$8.66624
10
$8.175698
$81.75698
100
$7.712923
$771.2923
500
$7.276342
$3638.171
1000
$6.864474
$6864.474
IRG4BC15MDPBF Product Details
IRG4BC15MDPBF Description
IRG4BC15MDPBF transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4BC15MDPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4BC15MDPBF has the common source configuration.